Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers

Abstract

Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of steps involved in the printing process and makes the process more energy efficient. In this article we show shifting of threshold voltage by charging with a Scanning Electron Microscope (SEM) electron source. Writing specific amounts of charge on the dielectric and a corresponding shift in threshold voltage is seen. The sample preparation will be discussed in detail elsewhere.