Abstract
The development of the novel three-terminal hybrid lateral memristor and transistor device called memtransistor, has successfully provided additional functionalities in memory devices. However, their high operating voltage is critical. In this report, we have utilized the vertical heterojunction of Copper/Rhenium diselenide/Graphene to obtain low power gate tunable memristor. In such devices, resistive switching is governed by barrier height at the Rhenium diselenide/Graphene) interface, which controls the flow of electrons to neutralize Cu ions for the formation of the Cu filament. Therefore, barrier height is manipulated from ∼60 meV at Vg = 90 V to ∼828 meV at Vg = - 90 V by tuning the work function of the mono layer graphene with back-gate voltages. Subsequently, the tuning of barrier height ultimately modulates the operating voltage from 0.53 V to 3.67 V and Ron/Roff ratio from 102 to 105 by changing the Vg from 90 V to −90 V respectively. Moreover, the deep ultraviolet light assisted resistance switching effect is also investigated in gate-controlled Copper/Rhenium diselenide/Graphene devices. Thus, gate modulation and deep ultraviolet light irradiation make it compatible for future application in integrated optoelectronic systems.
Published Version
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