Abstract
We proposed a strategy to significantly reduce the exposure power threshold for two-photon lithography on tunable reflection coating substrates. The focused light spot at the photoresist-reflective interface is modulated into a multi-layered distribution, which has an enhanced optical field compared to the incident light. The interference of incident and reflected light at the interface enhances the local light field by 1.6–3.4 times, equivalent to reducing the incident exposure power. The tailored multilayer nanowires fabricated by a single scan and the exposure power modulation mechanism proposed in this study would be of profound importance in the fields of semiconductor electronic devices.
Published Version
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