Abstract
I-III-VI semiconductor quantum dots (QDs) without Cd element have attracted considerable attention in the optoelectronics device areas. Herein, we demonstrated that AgInS2 QDs with tunable photoluminescence were used for light emitting diodes (LEDs). With the increase of reaction temperature, the photoluminescence (PL) peak was monotonically red shifted from 600 to 750 nm. The temperature-dependent lifetime of the photoluminescence emission could reach to 900 ns. The successful synthesis of the AgInS2 nanocrystals with long PL lifetime provided a potential application in LEDs. The fabricated QDs LEDs exhibited a relative low turn-on voltage of 2.9 V and a maximum luminance intensity of 122 cd/m2.
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