Abstract
Two types of novel lead-chalcogenide mid-IR emitters grown by molecular beam epitaxy (MBE) on Si or BaF 2 substrates are described: (a) PbSe/PbEuSe edge emitting double heterostructure (DH) and quantum well (QW) lasers are pumped optically with low-cost III–V laser-diodes. They emit in the 3–6 μm range with powers up to 200 mW. Tuning is performed by temperature change and/or mechanically if bars with slightly tapered composition are used. (b) A “wavelength transformer”, a PbSe/PbEuSe active resonant cavity with top and bottom Bragg mirror transforms the incoming 0.8 μm pump radiation to e.g. 4.2 μm wavelength. It operates at room temperature, width and value of the emission line is determined by design.
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