Abstract
Abstract PbSe quantum dots (QDs) were used to dope borosilicate glass with a composition of SiO 2 -B 2 O 3 -Al 2 O 3 -ZnO-AlF 3 -Na 2 O-PbO-Se, which was prepared using the conventional melt-quenching technique followed by heat treatment. We observed a broad near infrared (NIR) emission (960–1353 nm) band with a full-width-at-half-maximum (FWHM) value of 168–294 nm and a notable Stokes shift (139–167 nm), which depended on the temperature and duration of the heat treatment. At room temperature, the photoluminescence (PL) lifetime was approximately 1.24–1.92 μs, and it showed a clear dependence on the size and concentration of the QDs. The large FWHM and strong NIR emission of the PbSe QD-doped borosilicate glass may facilitate its application in NIR optical amplifiers and lasers.
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