Abstract
A multistate data memory device can store more than one bit in each cell. Such devices have broad application prospects because they provide a simple and low-cost way to improve memory capacity. As a biomaterial, silkworm hemolymph (SH) has the advantages of being easily accessible, biodegradable and biocompatible. In this study, performance-tunable multistate data storage devices with an indium tin oxide (ITO)/graphene oxide (GO)/SH/GO/Al structure were fabricated with SH and GO as dielectric layers. The results show that the proposed device structure has stable nonvolatile and bipolar switching characteristics. The conductivity and ON/OFF current ratio (1–103) of such a device can be adjusted by modifying the GO concentration. With appropriate control of the compliance current (ICC), the device can be switched to six different resistance states, enabling multistate data storage capabilities and allowing high-density data storage to be realized. These devices have a long retention time (104 s) and extended endurance. Their switching behavior is attributed to the formation and fracture of oxygen vacancy conductive filaments. This research introduces a new approach to the development of biocompatible high-density memory devices.
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