Abstract
Tunable mid-infrared (3/spl sim/5 /spl mu/m) receiving sensors are made of an optimized In/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As/Al/sub z/Ga/sub 1-z/As asymmetric step quantum-well structure. The sensors display photovoltaic-type photocurrent response as well as the bias-controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3/spl sim/5.3 /spl mu/m infrared atmospheric transmission window. The theoretical calculation on the linear Stark effects of the intersubband transitions between the ground and first excited states in the asymmetric step well, which was made by the method of expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective-mass envelope-function theory, agree well with the corresponding experimental measurements. The values of the main properties, including photocurrent response, dark current, and blackbody receptivity, which, for example, reaches to about 1.0 /spl times/ 10/sup 10/ cm/spl middot/Hz/sup 1/2//W at 77 K under bias of /spl plusmn/7 V, of the sensors have approached near to the application requirements.
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