Abstract
We report the observation of second-harmonic generation (SHG) in reflection from a GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As asymmetric quantum-well (AQW) structure and a GaAs(001) face. SHG intensities are measured as a function of sample azimuthal angle for several polarization configurations using a pulsed 775-nm fundamental beam. Isotropic contributions to the p-polarized SHG intensity are found for both samples, which provides clear evidence of SHG arising from both the AQW structure and the GaAs(001)/oxide buried interface. The experimental results are consistent with a strong SHG contribution from the AQW structure with magnitude close to that of the bulk contribution; this interpretation is supported by previous theoretical predictions. Given the magnitude of the second-harmonic susceptibility for an AQW, strong SHG enhancement for visible and/or near-infrared light by full implementation of quasi-phase-matching is feasible.
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