Abstract
Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.
Highlights
Resistive Random Access Memory (ReRAM), as a disruptive technology, can be compatible with conventional semiconductor processes, attracting much attention [1,2]
The memristic behaviors can be tunable by the graphene oxide (GO) content, we focus on the operating mechanism, as well as the influence of GO on the device performance
For observation from the high-resolution transmission electron microscope (HRTEM) image in Figure 1b, the interlayer spacing between GO sheets reaches roughly 0.24 nm
Summary
Resistive Random Access Memory (ReRAM), as a disruptive technology, can be compatible with conventional semiconductor processes, attracting much attention [1,2]. It can revolutionize the product performance in digital memories, capable of substituting all current up-to-date memories like hard disk drives, random-access memories, and Flash memories. Confronted with a traditional Metal-Oxide-Semiconductor (MOS)-accessed memory cell, memristor-based RRAM bears the promising potential of forming a cross-point structure without access devices, for the sake of achieving an ultra-high density form of data storage. Induced by applying different voltages to the device terminals, it utilizes functional materials switching among more than two distinct resistance states. Relying on the bistable resistance states, this device can be used with nearly any oxide material, such as NiO, ZnO, ZrO2, HfO2, SrZrO3, and BaTiO3 [6,7,8,9,10]
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