Tunable interdot coupling in few-electron bilayer graphene double quantum dots

Abstract

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 and 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independent of the charge occupation of the quantum dots. The charging energy and, hence, the dot size remain nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.