Abstract
Abstract Differing from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.
Highlights
Strain engineering has both theoretically and experimentally proved to be an effective approach to continuously tune the bandgap of transition metal dichalcogenides (TMDs), which subsequently modulates the electronic, optical, and photonic properties of TMDs [84,85,86,87,88,89,90,91, 142,143,144]
The heterostructures composed of different 2D TMDs stacked along the out-of-plane direction or in-plane direction [148] can exhibit significant different electronic and optical properties compared with each component material, having great potential for atomically thin optoelectronic and photovoltaic applications [75, 149,150,151,152]
We have summarized several strategies on the electronic structures modulation of 2D TMDs, including thinning thickness down, defect engineering, chemical composition modification, foreigner species intercalation, strain engineering, and heterostructure construction, to tune its optical absorption, charge carrier’s mobility, and band structure alignments, adapting for the different optoelectronic devices
Summary
Thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have been extensively studied. Y. Jing et al.: Tunable electronic structure of two-dimensional transition metal chalcogenides.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
