Tunable electron affinity with electronic band alignment of solution processed dielectric

Abstract

We report the tunability of the electronic band structure, especially the electron affinity, of an all-inorganic precursor processed sol-gel aluminium oxide phosphate dielectric by the influence of processing temperature. The dielectric offers tunable electron affinity ranging from 1.42 eV to 0.72 eV with the change in processing temperature from as-prepared to 1000 °C, respectively. The remarkable change in electron affinity is ascribed to the variation in the bulk oxygen concentration in solution processed oxide. As a result, the leakage current of the dielectric is affected significantly by a factor of ∼103.