Abstract
The physical properties of Zn-doped Fe3O4 (i.e. ZnxFe3−xO4 with ) synthesised by the sol-gel method have been investigated systematically. X-ray diffraction and x-ray photoelectron spectroscopy (XPS) measurements prove that Zn ions have been doped into the Fe3O4 crystal lattice. The valence band XPS spectra show that the carrier concentration decreases with increasing the Zn content. The electric measurements reveal that the resistivity increases when increasing the Zn concentration. The absolute value of the magnetoresistance of ZnxFe3−xO4 is above 3.11% at room temperature, indicating that the samples maintain high spin polarisation after Zn2+ doping. The fitting of the current–voltage curves of ZnxFe3−xO4/n-type Si heterostructures demonstrates that the height of the Schottky barrier reduces continuously from 0.82 eV to 0.76 eV with increasing x. The results may recommend ZnxFe3−xO4 as a potential material for spintronic applications.
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