Abstract
A study of the contact resistance (Rsd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, Rsd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, Rsd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of Rsd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit Rsd and its relevant impacts on organic transistor.
Published Version
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