Abstract
Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Mg or Ru) multilayers by interfacial modification was reported. AHE behavior can be effectively tuned with the different insertion. For example, the anomalous Hall resistivity (ρAH) value increases by 23% with 0.4 nm Mg insertion. Whereas, the ρAH value decreases by 7.5% with 0.4 nm Ru insertion. Interfacial structural results from X-ray photoelectron spectroscopy (XPS) shows various interfacial oxygen migration can be induced by the different insertion, leading to the opposite contribution to AHE in multilayers structure. This study will provide an effective way to tune the properties of the AHE-based devices.
Highlights
Anomalous Hall effect (AHE) in ferromagnetic materials has been paid more attention during the past several decades because of its controversial physical mechanism and huge potential applications.[1,2,3] AHE devices have been rapidly developed in the fields of magnetic sensors and magnetic random access memory, where the materials should keep high sensitivity or Hall resistance, respectively.[4,5,6,7] In previous studies, AHE behavior can be successfully manipulated by several methods, such as tuning chemical composition,[8] crystal structure,[9] local epitaxial growth.[10]
Interfacial oxygen behavior was successfully manipulated by various insertions, leading to the opposite contribution to AHE
To remove the ordinary Hall effect (OHE), we extend the saturation ρxy-H and the intercept at Y axis of the extension cord can be obtained
Summary
Anomalous Hall effect (AHE) in ferromagnetic materials has been paid more attention during the past several decades because of its controversial physical mechanism and huge potential applications.[1,2,3] AHE devices have been rapidly developed in the fields of magnetic sensors and magnetic random access memory, where the materials should keep high sensitivity or Hall resistance, respectively.[4,5,6,7] In previous studies, AHE behavior can be successfully manipulated by several methods, such as tuning chemical composition,[8] crystal structure,[9] local epitaxial growth.[10]. Interfacial oxygen behavior manipulation is related to several methods, such as preparation techniques,[24,25] annealing,[26] strain[27,28,29] and electric control.[30,31,32] there is less research about the effect of interfacial oxygen behavior on AHE. AHE in MgO/CoFeB/Ta/MgO multilayers can be tuned by various insertions. Interfacial oxygen behavior was successfully manipulated by various insertions, leading to the opposite contribution to AHE
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