Abstract
Good and safe long-term operation of gaseous detectors are mainly guaranteed by the quality and stability of their gas mixture. Among Micro Pattern Gaseous Detectors (MPGD), Triple Gas Electron Multipliers (Triple-GEMs) have lately been more and more considered as tracking devices for LHC Experiments Muon Systems, as well as for others physics applications. Triple-GEM detectors are commonly operated with Ar/CO2 or Ar/CO2/CF4gas mixtures, and the correct proportion between the different gas mixture components is fundamental for stable detector operation. Moreover, common impurities such as N2, O2 and H2O can affect their performance, mining their response reliability. This study presents a characterization of Triple-GEM detectors performance in relation to their gas mixture composition. Results are reported in terms of experimental measurements as well as computer simulations of the Triple-GEM electron amplification process.
Highlights
: Good and safe long-term operation of gaseous detectors are mainly guaranteed by the quality and stability of their gas mixture
This study presents a characterization of Triple-GEM detectors performance in relation to their gas mixture composition
Voltage was supplied to the GEM foils through a single high voltage line, connected to a custom-made ceramic voltage divider that allowed to supply each foil with the required voltage [6]
Summary
The Triple-GEM performance for different gas mixture compositions was analyzed through a computer simulation in parallel to the laboratory tests. It can be seen that the total number of electrons stopped at the foil position is higher in the second and third foils, as they are reached by a higher number of them thanks to the multiplication happened in the previous stages This results confirms the known phenomenon of electron loss at the holes walls [1], which defines the difference between the real amplification gain and the effective one, the latter being the total number of electrons reaching the readout board. The effective amplification gain for a given gas mixture was calculated as the mean value of the distribution of the number of electrons reaching the read-out plane for every primary electron released in the drift volume Such value was used to compare the simulation performance to the experimental results
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