Abstract
Homoepitaxial Si films have been synthesized by magnetron sputterepitaxy at substrate temperatures of 570 °C. The films have beencharacterized by high-resolution x-ray diffraction (HRXRD), by triple-crystaldiffractometry (TCD), by x-ray standing-wave method (XSW) and by reciprocalspace mapping (RSM). It is shown that for highly defective films, theinformation obtained from HRXRD or TCD alone might not be enough to reveal thecomplete film structure. With the addition of XSW and RSM, however, acomprehensive view of the investigated structure can be obtained.
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