Abstract
This paper describes specific applications illustrating the use of High Resolution X-Ray Diffraction (HRXRD) for the inline control of advanced logic technology nodes. More specifically, an innovative strategy based on HRXRD rocking-curve analysis is described for the control of epitaxial SiGe layers on Fully Depleted Silicon On Insulator (FD-SOI) wafers including consideration of the strategy for managing the tilt between the SOI layer and the bulk silicon substrate. Furthermore, the quality of HRXRD Reciprocal Space Maps (RSMs) obtained in an industrial environment is demonstrated and the benefit of RSMs for inline control is discussed.
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