Abstract
A trip-point bit-line precharge (TBP) sensing scheme is proposed for high-speed single-ended static random-access memory (SRAM). This TBP scheme mitigates the issues of limited performance, power, sensing margin, and area found in the previous single-ended SRAM sensing schemes by biasing the bit-line to a slightly larger value than the trip point of the sense amplifier. Simulation results show that the TBP sensing scheme can reduce the sensing time by 58.5% and 10% compared with the domino and ac-coupled sensing schemes, respectively. Further, compared with the ac-coupled sensing scheme, the proposed scheme offers 10% lower sensing power, 36% lesser area, and a 60 mV lower value of the minimum supply voltage for the target sensing yield.
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