Abstract

Magnesium iodide (MgI2) solid-electrolyte interface (SEI) layers have previously been shown to protect Mg metal anodes from passivation through products formed during Mg(TFSI)2 electrolyte decomposition (TSFI = trifluorosulfonimide). MgI2 formed in situ from small quantities of I2 added to the electrolyte shows a drastic decrease in the overpotential for magnesium deposition and stripping. In this work, a MgI2 SEI layer was created in an ex situ fashion and then the electrochemical characteristics of this MgI2 SEI layer were probed both alone and with small quantities of I2 or Bu4NI3 additives to identify the electroactive species. Chronopotentiometry (CP) and cyclic voltammetry (CV) show that the MgI2 SEI alone is insufficient for low overpotential magnesium cycling. I(3d) XPS data show that I3- is formed within the SEI layer, which can serve as the electroactive species when ligated with Mg2+ for low overpotential (<50 mV at 0.1 mA cm-2 current density) cycling. Moreover, Raman shifts at 110 and 140 cm-1 are consistent with I3- formation, and these signatures are observed before and after CP experiments. The Mg0 deposition curves in the CV with additives are consistent with diffusive species. Finally, electrochemical impedance spectroscopy (EIS) shows that there is a large decrease in the charge-transfer resistance within the SEI when either I2 or Bu4NI3 additives are used, which supports a solvating effect that facilitates magnesium deposition and stripping.

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