Abstract
Molybdenum di-sulfide thin films of thickness <1500 Å, were prepared by the dip-coating technique at different baking temperatures within the range 400 °C–450 °C using methanolic solution of ammonium molybdate and ammonium thiocyanate and hence studied their different properties using X-ray diffraction (XRD), UV-vis spectroscopy, Photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and Current-Voltage (I-V) relationship measurements. XRD result shows that the MoS2 films are mixed metallic octahedral prismatic 1T- and trigonal prismatic bulk crystal 2H-phases. The I-V relationships show higher electrical conductivity for the films prepared at 400 °C and 450 °C than the films prepared at 425 °C. XPS measurement also shows the formation of mixed phases of MoS2 thin films as revealed by XRD. We have estimated the valence band maximum (VBM) and work functions from higher and lower energy range of UPS (He-I) spectra of MoS2 thin films prepared at 425 °C and 450 °C. The VBM are ∼4.4 eV & ∼4.2 eV and their work functions are ∼3.5 eV & ∼3.3 eV respectively that are correlated with conductivity and formation of mixed phases of MoS2 thin films.
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