Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron‐Doped Graphene

Abstract

Herein, the synthesis of a stable and homogeneous boron‐doped graphene film using triethylborane as a single source of carbon and boron is reported. The effects of triethylborane amount and growth time on the synthesis of doped graphene are investigated under the same growth conditions on polycrystalline copper foil in a three‐zone chemical vapor deposition (CVD) system, which has not thus far been researched in detail. The findings show that boron‐doped graphene films are successfully synthesized. The results enable the design of a recipe for thin‐film doped graphene grown with optimum optical transmission and sheet resistance via amending TEB molarity and growth time. Such changes suggest that the single‐layer graphene film with high homogeneity can be obtained for the film grown using 0.5 m triethylborane along with 10 min growth time as confirmed by Raman mapping and atomic force microscope (AFM) measurements. It is further revealed that increasing the amount of triethylborane and growth times leads to the formation of thicker graphene films. In addition, X‐ray photoelectron spectrometer (XPS) measurements indicate that boron atoms get into a honeycomb structure, thanks to substitutional doping. The findings of this study have significant implications for the implementation of boron‐doped graphene films in semiconductor‐based technology.