Abstract
ABSTRACT In this study, tributylbismuth has been tested as a bismuth source for strontium bismuth tantalate (SBT) deposition using atomic vapor deposition (AVD) system. The effects of annealing temperature on the structural and electrical properties of deposited films were investigated. SBT films annealed at 750°C were crystallized in ferroelectric perovskite phase. Ferroelectric hysteresis loops of the SBT films have been measured, from which a remnant polarization of 3.5 μC/cm2 and a coercive voltage of 3 V of the crystallized SBT layer have been evaluated. SBT thin films annealed at 750°C also showed good fatigue properties. Fatigue was found to be about 4% after 109 cycles.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
