Triboelectric activation of ferroelectric liquid crystal memory devices

Abstract

The switching of ferroelectric liquid crystal (FLC) memory device is achieved by triboelectric effect of externally connected insulator to the sample through a conductor. The positive and negative charges are induced by triboelectrification of polymers, depending on the nature of materials, and utilized to get the bright and dark states of the FLC memory device. These switching states are analyzed by electro-optical studies. This technique of polarization switching proves to be powerful for FLC devices exhibiting long-term memory. The charges, developed on the electrodes by this nonconventional technique, generate enough potential to switch the FLC molecules in memory state.