Abstract
Binary alloys of Group III-V metals and metalloids, such as GaSb, InSb and AlSb, were recently found to be very promising spintronic materials. For such potentially innovative materials, the quantum spin properties of constituent electrons can be exploited, for better enhanced high-tech applications, than the particulate dynamics of the electrons as in current electronic device applications. Ion beam surface sputtering is a versatile tool for crystal and thin film growth in materials science and characterisation. Consequently, trends of some sputtering parameters were investigated through Monte Carlo simulations of the bombardment of the binary compounds GaSb, InSb and AlSb using Argon, Helium and Krypton ions. The sputtering parameters for the binary compounds were found to be inconsistent as the angle of incidence increased, which occurred for different ion and energy combinations. Also, the maximum sputtering yield did not occur at a particular angle but within a range of values, 65° -85° and 75°- 85° for ion energies 1keV and 10keV respectively. The sputtering yield was also found to increase with an increase in the ion energy.
Highlights
IntroductionSputtering is the ejection of particles (atoms or molecules) from a solid material surface through the influence of highly energetic incident ions
Sputtering is the ejection of particles from a solid material surface through the influence of highly energetic incident ions
The values of the various sputtering parameters were the highest for He+ compared to other ions except for the sputtering yield where it was the lowest
Summary
Sputtering is the ejection of particles (atoms or molecules) from a solid material surface through the influence of highly energetic incident ions. A number of theoretical approaches have been developed over the years to study the nanostructuring of material surfaces by ion beam sputtering. These approaches include the continuum models [3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19], Monte Carlo simulations [20,21,22,23,24,25] and molecular dynamics simulations [26, 27]. The group III-V compound, GaSb is highly useful in optoelectronic development, it was reported to swell when bombarded with either high energy ions or low energy caesium ions at 14.5 keV [29]
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