Abstract
This paper reviews Thin Film Transistors (TFTs) and its performance characteristics. Specific focus has been given on the performance characteristics of oxide based TFT because of the wide range of applications of such TFT’s. The oxide TFT devices are having excellent potential in the near future as active matrix displays. Due to fast expansion of electronics industry, modelling of TFT’s and ability to simulate the circuit behavior prior to production is important. The parameters such as grain boundary defect, mobility, on-off current ratio, thermal stability etc. are important factors need to consider and capture while modeling. This paper also finally discusses the importance of programming voltage, process temperature charge leakage and storage capacity of memory devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
