Abstract
A novel vertical field plate (VFP) structure with low specific on-resistance ( R on,sp ) is proposed. The VFP is inserted in the field oxide of the drift region with heavily doped N pillar parallel to the trench oxide layer (TOL), which depletes fully the drift region to decrease R on,sp effectively and enhances the bulk field (ENBULF). The VFP optimises the bulk electric field to increase the breakdown voltage (BV). The BV of VFP is 668 V with an R on,sp of 44.7 mΩ cm 2 , which is much lower than the silicon limit.
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