Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

Abstract

The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted.