Trap states in n‐GaN grown on AlN/sapphire template by MOVPE

Abstract

AbstractUsing epitaxial AlN/sapphire templates, high crystalline quality GaN films are grown on them by metal organic chemical vapour deposition. The electron traps behaviour of these GaN films were observed by deep level transient spectroscopy (DLTS). Four distinct trap levels were ob‐served in both n‐GaN grown on AlN/sapphire template and on conventional low temperature buffer layer (LT‐BL)/sapphire. The magnitude the of the DLTS signal E1 and E2 were almost same. It suggests that E1 is not only associate with dislocation density but also other defect. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)