Trap-state suppression and band-like transport in bilayer-type organic semiconductor ultrathin single crystals

Abstract

Fundamental study of the carrier transport in both the channel layer and the electrode-channel contact of organic semiconductor crystals is indispensable for achieving high-performance organic field-effect transistors. In this paper, we report the temperature-dependent carrier transport of high-mobility organic semiconductors called $2\text{--}\text{decyl}\text{--}7\text{-phenyl-}[1]\text{benzothieno}[3,2\text{--}b][1]\mathrm{benzothiophene}$ (Ph-BTBT-C10) and $3\text{-decyl-}9\text{-phenyl-}[1]\text{benzothieno}[3,2\text{--}b]\text{naphtho}[2,3\text{--}b]\text{thiophene}$ (Ph-BTNT-C10). The use of single-crystal films with controlled bilayer-number thickness enabled the simultaneous study of intralayer and interlayer transport at cryogenic temperatures. Four-probe measurement of two-bilayer- and three-bilayer-thick films of Ph-BTBT-C10 suggests that the access resistance is dominated by tunneling transport across the insulating alkyl-chain layers. Single-crystal thin-film transistors of these materials showed band-like carrier transport down to 80 K and the carrier mobility of Ph-BTBT-C10 reached $34\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}/\mathrm{V}\phantom{\rule{0.16em}{0ex}}\mathrm{s}$. Detailed analysis of the low-temperature characteristics revealed small activation energy of approximately 5 meV and a sharp distribution of band tail states. These findings suggest that high crystallinity owing to the bilayer-type crystal structure effectively suppresses the localization of gate-induced carriers.