Abstract
We studied the resistive switching (RS) effect in LaAlO3/Nb:SrTiO3 heterostructures at different temperatures with AC impedance technique in addition to the conventional I–V measurements. It was demonstrated that the bipolar RS effect originates from LaAlO3/Nb:SrTiO3 interface and the resistance and capacitance states are controlled by the filling status of traps. A model based on the variation of trap state was proposed to explain the RS effect and the thermal history dependent electronic transport behavior. This work demonstrates the key role of trap state in the RS effect and electronic transport.
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