Abstract
Versatile resistance switching effects in niobium oxide based MIM structures have been reported. Besides the filamentary resistance and threshold switching effects, which occur after an initial electroforming process, a forming free resistance switching operation was found in a double layer structure of Nb 2 O 5 and Al 2 O 3 . In our work we report on the co-existence of a capacitance change accompanying the analog resistance switching effect. This memcapacitive effect might enable new applications in analog circuits, which go beyond the pure data storage. Results of IV-and CV characterization as well as impedance spectroscopy are presented. Furthermore, a physical model is proposed which describes the underlying mechanisms as interfacial quantum mechanical effect based on charging and discharging of electron trap states.
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