Abstract
Hydrogen diffusion is investigated in boron-doped diamond from the redistribution profiles under thermal annealing of an initial step-like profile of (B,H) pairs located in a shallow region below the surface. For boron concentrations in the range 2×10 19–1×10 20 cm −3, the profiles are Gaussian-like and effective diffusion coefficients can be calculated. From the diffusion activation energy, we deduce a (B,H) pair dissociation energy of 2.5 eV. For lower boron concentrations, the redistribution of hydrogen is inhibited by the presence of deep traps for hydrogen which might be associated with structural defects.
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