Abstract
Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.
Highlights
Today, there is a significant number of publications devoted to the study of electrophysical properties of boron-doped single-crystal synthetic diamond [1,2,3,4,5,6,7]
The paper presents a scheme of boron-doped diamond CVD synthesis by using triethyl borate as a boron-containing substance
The high boron content obtained according to the proposed scheme samples (2.9% mass) is explained by the need for high oxygen atoms concentration in the gas mixture for successful etching of the emerging polycrystalline diamond
Summary
There is a significant number of publications devoted to the study of electrophysical properties of boron-doped single-crystal synthetic diamond [1,2,3,4,5,6,7]. The number of defects is notably affected by the single-crystal CVD-diamond (chemical vapor deposition-diamond) deposition rate: the probability of defect formation and their number per unit area grows with. Processes 2020, 8, x FOR PEER REVIEW number of defects is notably affected by the single-crystal CVD-diamond Single-crystal thin films grown at diamond) theTherefore, probabilityboron-doped of defect formation and theirdiamond number per unit areaare grows a lowwith deposition rate. Boron-doped single-crystal diamond thin films are new grown substrates intodeposition the reactorrate
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