Abstract
The analytical expressions for trap filled limit voltage () and current–voltage characteristics for non-zero organic Schottky barrier are derived theoretically. The theoretical results are validated experimentally. In this case, the injected free charge carrier density at the contact is not infinitely large but a finite number p(0). For an exponential distribution of traps the maximum possible number of traps that can be filled in a sample is , where l = Tc/T, Tc is the characteristic temperature of trap distribution. The use of Fermi–Dirac statistics causes a maximum error of only 6.9% in . The analytical expression for is shown to be , where d is the sample thickness. As the applied voltage increases and if , V2 law is obtained over a considerable range of applied voltage. However, the curves change to Ohm's law as the voltage increases beyond this range. If , V2 law is not obtained and the curves directly go to Ohm's law. Experimental results of ITO/PEDOT : PSS/poly(2-methoxy-5-(2-ethyhexyloxy)1,4-phenylenevinylene)(MEH-PPV)/Au and ITO/PEDOT : PSS/poly(3-hexyl thiophene)(P3HT)/Au Schottky diodes are reported. The experimental results show excellent agreement with the theory.
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