Abstract
The noise characteristics of semiconductor lasers as seen in experiments strongly depend on laser structure. In general, transverse-junction-stripe (TJS) lasers demonstrate lower noise and more often produce squeezing. The maximum squeezing was observed in the TJS lasers which were made from wafers grown by an old liquid-phase epitaxy (LPE) technique [198]. This technique has become obsolete, and wafers are now grown using the metal-organic chemical vapor deposition (MOCVD) technique. MOCVDgrown lasers showed higher noise than the LPE-grown lasers. Until recently, the MOCVD process had not been optimized for the generation of a high level of squeezing.
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