Abstract
c-axis oriented ferroelectric Pb/sub 5/Ge/sub 3/O/sub 11/ (PGO) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) and rapid thermal process (RTP) annealing techniques. The films showed very good ferroelectric properties at 5 V: 2Pr and 2Ec values were 3.0-6.0 /spl mu/C/cm/sup 2/ and 90-110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1/spl times/10/sup 9/ switching cycles. The retention charge remained at 0.93 after a waiting time of 1500 seconds. The leakage currents of the PGO films were 2-5/spl times/10/sup -7/ A/cm/sup 2/ at 100 kV/cm and dielectric constants were 40-70. The memory window of Pt/PGO/Ir/SiO/sub 2//Si structures is about 3.8 V. The high quality MOCVD Pb/sub 5/Ge/sub 3/O/sub 11/ films can be used for one-transistor memory applications.
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