Abstract
GaAsn/AlAsm superlattices grown on the GaAs (311)A and (311)B surfaces by molecular-beam epitaxy were studied by Raman light scattering. The form of the Raman scattering tensor allowed the TO y and TO x modes to be separately observed using various scattering geometries (the y and x axes correspond to atomic displacements along and across facets formed on the (311)A surface, respectively). The TO1y and TO1x modes exhibited splitting in superlattices grown on a faceted GaAs(311)A surface. The degree of splitting increased for superlattices with an average GaAs layer thickness of 6 monoatomic layers and less. No splitting was observed for superlattices grown under the same conditions on the (311)B surface, which indicates that the splitting effect is probably due to the formation of GaAs quantum wires on the faceted (311)A surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
