Abstract
Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 μm squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8–10 μm devices in the ranges of one to four times threshold. In smaller devices of 4 μm square dimension, the transverse mode at threshold appears as a lowest order mode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
