Transverse magnetoresistance: A novel two-terminal method for measuring the carrier density and mobility of a semiconductor layer

Abstract

The magnetic-field dependence of the two-terminal magnetoresistance that occurs in rectangularly shaped samples can be used to determine both the free-carrier density and the mobility of a semiconductor layer. An approximate equation for the magnetoresistance was derived for variable length-to-width ratio. This technique was used to determine the electron density and mobility of accumulation layers in n-type Hg0.8Cd0.2Te photoconductive infrared detectors at 6 and 77 K. It should be applicable to a wide variety of fabricated devices and allow significant improvements in processing methods and quality control.