Transport through dopant atom arrays in silicon junctionless nanowire transistor

Abstract

Individual donor atoms within silicon nanoscale devices are promising candidates as the building blocks in quantum computing. In this work, we report the electron transport behaviors through the arrays of phosphorus atoms in a heavily n-doped silicon junctionless nanowire transistor. The multiple-split current peak features are observed due to the interdot coupling in the initial stage of conduction at the low temperatures. With the gate voltage increasing, one-dimensional transport behavior is occurred with the appearance of a series of regular current plateaus. The gate-dependent transport evolution is determined by the modulation of the tunnel barrier potentials of ionized dopant atoms.