Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor**Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

Abstract

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source–drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.