Abstract
ABSTRACTWe report an investigation of electronic properties of two-dimensional electron gas (2DEG) confined at AlGaN/GaN heterostructures by magnetotransport measurements. The second-subband population is manifested by the multi-frequency in the Shubnikov-de Haas (SdH) oscillations. The modulated patterns of SdH oscillations which are due to the two-subband occupancy can be drastically enhanced by employing the microwave modulation technique. This unique advantage enables us to provide direct experimental evidence that the 2DEG in the second subband has a higher mobility than that in the first subband in the modulation-doped Al0.22Ga0.78N/GaN heterostructures by means of microwave-modulated magnetotransport measurements. The carrier concentrations and 2DEG Fermi energy for each subband were determined. It was found that the second-subband population ratio increases with spacer thickness up to 5 nm, while the subband separation decreases.
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