Abstract
We investigate the transport scattering time, the single-particle relaxation time and the magnetoresistance of a quasi-two-dimensional electron gas in a GaP/AlP/GaP quantum well at zero and finite temperatures. We consider the interface-roughness and impurity scattering, and study the dependence of the mobility, scattering time and magnetoresistance on the carrier density, temperature and local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of Gold and Marty (Physica E 40 (2008) 2028; Phys. Rev. B 76 (2007) 165309). We also discuss the possibility of a metal–insulator transition which might happen at low density.
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More From: Physica E: Low-dimensional Systems and Nanostructures
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