Year-end Sale % OFF 
Abstract
Improving transport phenomena and increasing the absorption of III-V materials is a major research topic. These properties are affected by several factors. Understanding the link between substrate choice and transport properties is essential. In this study, the constraints due to lattice mismatch and its impact on the transport properties of the In1−xGaxAsyP1−y alloy epitaxially grown on different substrates were studied according to the arsenic and indium content. The variation in the transport properties by varying the pressure from 0 to 120 kbar and the temperature from 0 to 500 K has also been studied. The effect of the substrate (InP, GaAs, or ZnSe) on quaternary absorption peaks was also examined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
