Abstract
Transport properties of Mn-doped ruthenium silicide Ru 2Si 3 were studied both experimentally and theoretically. The precipitation-free Ru 2Si 3 single crystals were grown by the zone melting technique with radiation heating. The temperature dependence of the electrical resistivity and Hall coefficients of the crystals were measured. The electrical resistivity of 1% Mn-doped Ru 2Si 3 was lower than that of undoped crystals. The carrier concentration in the doped samples is about 10 18 cm −3 at room temperature. Mn-doped Ru 2Si 3 has a twice higher carrier mobility compared to the undoped one. Theoretical calculation of the charge carrier mobility is based on the effective masses which are estimated from the ab initio electronic band structure and classical scattering mechanisms.
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