Transport properties of InxGa1−xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxy

Abstract

We have investigated the transport properties of two-dimensional electron systems in strained InxGa1−xAs channels confined in a potential well formed by delta doping and GaAs barriers. The dependence of the transport parameters on the indium composition has been studied using Hall, Shubnikov–de Haas, and cyclotron resonance measurements. Experimental measurements of the effective mass have been compared with theoretical data obtained from self-consistent calculations, which take account of effects due to biaxial strain and nonparabolicity on the band structure of InxGa1−xAs.