Abstract
The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n-type InN nanowires with diameter >100nm was measured by the transmission line method and the value was on the order of 4×10−4Ωcm. The specific contact resistivity for unalloyed Pd∕Ti∕Pt∕Au ohmic contacts was near 1.09×10−7Ωcm2. The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN.
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