Abstract
An attempt has been made to explain the physical phenomena underlying the spontaneous Hall effect (SHE) in amorphous Gd-Co films. The experimental investigations were performed for films with compositions in the vicinity of the compensation point (for cobalt concentration from 68 up to 82 at%). The results obtained show that the SHE in the films investigated can be governed by the side-jump mechanism, though these results seem to imply that skew-scattering is the origin of the SHE.
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